Furthermore, it is shown how incorporating additional stages to the PSIM-based element, including impedance scaling and / or the addition of series or shunt passive elements, influences the losses and enables the efficient processing of high power levels given the limitations of available switches. A detailed analysis of the factors affecting the losses as well as the tradeoffs of a basic PSIM-based element is provided. In this paper, we develop design approaches that enable it to be practically used at up to many kilowatts of power at frequencies in the 10s of MHz. This is achieved by leveraging an emerging technique – known as phase-switched impedance modulation (PSIM), which involves switching passive elements at the rf operating frequency – that has previously been demonstrated at rf frequencies at up to a few hundred Watts. This work develops techniques that enable the design of high power tunable matching networks (TMN) that can be tuned orders of magnitude faster than with conventional tunable impedance matching techniques, while realizing the high power levels required for many industrial applications. Then, quality factor direct analysis is used for two tunnel diode small signal equivalent circuits analysis, allowing for the first time the Q and input impedance direct analysis on Smith chart representation of a circuit, including negative resistanceĭynamically-tunable impedance matching is a key feature in numerous radio-frequency (RF) applications at high frequencies (10s of MHz) and power levels (100s–1000s of Watts and above). Thus, a direct multi-parameter frequency dependent analysis is proposed including Q, inductance and reflection coefficient for inductors. The constant Q - computer aided design (CAD) implementation of the Q semi-circles on the 3D Smith chart is then successfully used to evaluate the quality factor variations of newly fabricated Vanadium dioxide inductors first, directly from their reflection coefficient, as the temperature is increased from room temperature to 50 degrees Celsius (C). ![]() Also, we find out that these constant Q contours represent complementary semi-circles in the south hemisphere while represented on the 3D Smith chart for negative resistance circuits. On the contrary we show that the constant Q contours for active circuits with negative resistance form complementary circle arcs on the same family of coaxal circles in the exterior of the 2D Smith chart. ![]() Furthermore, these circle arcs represent semi-circles families in the north hemisphere while represented on a 3D Smith chart. The article proves first that the constant quality factor (Q) contours for passive circuits, while represented on a 2D Smith chart, form circle arcs on a coaxal circle family.
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